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Examination of models for Zn diffusion in GaAsVAN OMMEN, A. H.Journal of applied physics. 1983, Vol 54, Num 9, pp 5055-5058, issn 0021-8979Article

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Simulation of phosphorus diffusion in silicon using a pair diffusion model with a reduced number of parametersGHADERI, K; HOBLER, G.Journal of the Electrochemical Society. 1995, Vol 142, Num 5, pp 1654-1658, issn 0013-4651Article

Création et recuit de paires isolées de défauts de Frenkel dans KCl-RbLUSHCHIK, A. CH; LUSHCHIK, N. E; FRORIP, A. G et al.Fizika tverdogo tela. 1984, Vol 26, Num 9, pp 2829-2834, issn 0367-3294Article

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The relationship between measured activation enthalpy and pre-exponentiel factor: rate processes in ionic crystals in the intrinsic-extrinsic regionDOSDALE, T; BROOK, R. J.Solid state ionics. 1983, Vol 8, Num 4, pp 297-304, issn 0167-2738Article